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? semiconductor components industries, llc, 2011 november, 2011 ? rev. 8 1 publication order number: bc846awt1/d bc846, sbc846, bc847, sbc847, bc848 series general purpose transistors npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sc ? 70/sot ? 323 which is designed for low power surface mount applications. features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector-emitter voltage bc846, sbc846 bc847, sbc847 bc848 v ceo 65 45 30 v collector-base voltage bc846, sbc846 bc847, sbc847 bc848 v cbo 80 50 30 v emitter-base voltage bc846, sbc846 bc847, sbc847 bc848 v ebo 6.0 6.0 5.0 v collector current ? continuous i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c p d 150 mw thermal resistance, junction ? to ? ambient r ja 833 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com sc ? 70/sot ? 323 case 419 style 3 marking diagram xx = specific device code m = month code = pb ? free package (note: microdot may be in either location) xx m collector 3 1 base 2 emitter 1 2 3 see detailed ordering and shipping information in the package dimensions section on p age 12 of this data sheet. ordering information
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage bc846, sbc846 series (i c = 10 ma) bc847, sbc847 series bc848 series v (br)ceo 65 45 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage bc846, sbc846 series (i c = 10 a, v eb = 0) bc847, sbc847 series bc848 series v (br)ces 80 50 30 ? ? ? ? ? ? v collector ? base breakdown voltage bc846, sbc846 series (i c = 10 a) bc847, sbc847 series bc848 series v (br)cbo 80 50 30 ? ? ? ? ? ? v emitter ? base breakdown voltage bc846, sbc846 series (i e = 1.0 a) bc847, sbc847 series bc848 series v (br)ebo 6.0 6.0 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain bc846a, bc847a, sbc847a, bc848a (i c = 10 a, v ce = 5.0 v) bc846b, sbc846b, bc847b, sbc847b, bc848b bc847c, sbc847c, bc848c (i c = 2.0 ma, v ce = 5.0 v) bc846a, bc847a, sbc847a, bc848a bc846b, sbc846b, bc847b, sbc847b, bc848b bc847c, sbc847c, bc848c h fe ? ? ? 110 200 420 90 150 270 180 290 520 ? ? ? 220 450 800 ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ? emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ? emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 ? 660 ? 700 770 mv small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 3 bc846a, bc847a, sbc847a, bc848a figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 0.1 0.01 0.001 0.0001 0 0.02 0.18 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 0.04 0.06 0.08 0.10 0.12 0.14 0.16
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 4 bc846a, bc847a, sbc847a, bc848a figure 5. collector saturation region i b , base current (ma) figure 6. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 7. capacitances v r , reverse voltage (volts) 10 figure 8. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 5 bc846b, sbc846b figure 9. dc current gain vs. collector current figure 10. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 600 0.1 0.01 0.001 0.0001 0 0.15 0.30 figure 11. base emitter saturation voltage vs. collector current figure 12. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 500 0.25 0.20 0.05 0.10
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 6 bc846b, sbc846b figure 13. collector saturation region i b , base current (ma) figure 14. base ? emitter temperature coefficient i c , collector current (ma) 1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma 1.4 1.8 2.2 2.6 3.0 0.5 5.0 20 50 100 -55 c to 125 c vb for v be figure 15. capacitance v r , reverse voltage (volts) 40 figure 16. current ? gain ? bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 7 bc847b, sbc847b, bc848b figure 17. dc current gain vs. collector current figure 18. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 600 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 19. base emitter saturation voltage vs. collector current figure 20. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 0.10 0.15 0.20 0.25 300 400 500 1.0
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 8 bc847b, sbc847b, bc848b figure 21. collector saturation region i b , base current (ma) figure 22. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 23. capacitances v r , reverse voltage (volts) 10 figure 24. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 9 bc847c, sbc847c, bc848c figure 25. dc current gain vs. collector current figure 26. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 1000 0.1 0.01 0.001 0.0001 0 0.05 0.30 figure 27. base emitter saturation voltage vs. collector current figure 28. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 1 v ce = 1 v 150 c ? 55 c 25 c i c /i b = 20 150 c ? 55 c 25 c 0.4 0.9 i c /i b = 20 150 c ? 55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ? 55 c 25 c 0.10 0.15 0.20 0.25 300 400 500 1.0 600 700 800 900
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 10 bc847c, sbc847c, bc848c figure 29. collector saturation region i b , base current (ma) figure 30. base ? emitter temperature coefficient i c , collector current (ma) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 0.2 1.0 10 100 -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 31. capacitances v r , reverse voltage (volts) 10 figure 32. current ? gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 11 1 ms thermal limit 1 s figure 33. safe operating area for bc846a, bc846b figure 34. safe operating area for bc847a, bc847b, bc847c v ce , collector emitter voltage (v) v ce , collector emitter voltage (v) 100 10 1 0.001 0.01 0.1 1 100 10 1 0.1 0.001 0.01 0.1 1 figure 35. safe operating area for bc848a, bc848b, bc848c v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) i c , collector current (a) i c , collector current (a) 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms 1 ms thermal limit 1 s 100 ms 10 ms
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 12 device ordering and specific marking information device specific marking code package shipping ? bc846awt1g 1a sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel bc846bwt1g 1b sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel SBC846BWT1G bc847awt1g 1e sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel sbc847awt1g bc847bwt1g 1f sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel sbc847bwt1g bc847cwt1g 1g sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel sbc847cwt1g bc847cwt3g 1g sc ? 70 (sot ? 323) (pb ? free) 10,000 / tape & reel bc848awt1g 1j sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel bc848bwt1g 1k sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel bc848cwt1g 1l sc ? 70 (sot ? 323) (pb ? free) 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging spe- cifications brochure, brd8011/d.
bc846, sbc846, bc847, sbc847, bc848 series http://onsemi.com 13 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc846awt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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